PSMN9R0-30LL NXP Semiconductors, PSMN9R0-30LL Datasheet - Page 7

• Manufacturer Part Number: PSMN9R0-30LL
• Description: MOSFET,N CH,30V,21A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN9R0-30LL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(S)
g
fs
60
45
30
15
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
10
…continued
20
Conditions
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
I
D
DS
DS
003aae132
G(ext)
= 7.5 A; V
= 10 A; dI
(A)
Figure 16
= 15 V; R
= 15 V
= 4.7 Ω; T
30
Rev. 04 — 7 July 2010
S
GS
/dt = 100 A/µs; V
L
= 1.5 Ω; V
= 0 V; T
j
= 25 °C
Fig 6.
N-channel QFN3333 30 V 9 mΩ logic level MOSFET
j
= 25 °C;
GS
(A)
I
D
30
20
10
= 10 V;
0
GS
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
= 0 V;
1
T
j
PSMN9R0-30LL
= 150 °C
Min
-
-
-
-
-
-
-
2
T
Typ
16
18
22
8
0.85
30
22
j
= 25 °C
3
© NXP B.V. 2010. All rights reserved.
003aae131
V
GS
-
Max
-
-
-
1.2
-
-
(V)
4
Unit
ns
ns
ns
ns
V
ns
nC
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