SUP53P06-20-E3 Vishay, SUP53P06-20-E3 Datasheet - Page 5

• Manufacturer Part Number: SUP53P06-20-E3
• Description: MOSFET, P, TO-220
• Manufacturer: Vishay

Specifications of SUP53P06-20-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 53A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 19.5mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Operating Temperature Range: -55°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0195 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
- 0.1
- 0.4
140
120
100
0.8
0.5
0.2
80
60
40
20
0
- 50
0
0.01
0.1
1
http://www.vishay.com/ppg?68633.
- 25
10
-4
25
Power Derating, Junction-to-Case
0.1
Duty Cycle = 0.5
Single Pulse
0.2
0
0.02
T
50
Threshold Voltage
T
J
J
0.05
- Temperature (°C)
25
- Temperature(°C)
75
50
I
D
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Case
100
10
-3
100
I
125
D
= 1 mA
125
150
New Product
150
Square Wave Pulse Duration (s)
10
-2
1000
100
0.1
60
50
40
30
20
10
10
0
1
0.1
0
* V
Safe Operating Area, Junction-to-Ambient
Max. Drain Current vs. Case Temperature
Single Pulse
T
GS
C
25
= 25 °C
> minimum V
V
DS
T
- Drain-to-Source Voltage (V)
C
50
1
- Case Temperature (°C)
Limited by R
GS
10
at which R
-1
75
SUP53P06-20
DS(on)
Vishay Siliconix
100
10
DS(on)
BVDSS
Limited
*
is specified
125
www.vishay.com
10 µs
100 µs
1 ms
10 ms
100 ms, DC
100
150
1
5