ZVN2106G Diodes Inc, ZVN2106G Datasheet - Page 2

• Manufacturer Part Number: ZVN2106G
• Description: MOSFET, N, SOT-223
• Manufacturer: Diodes Inc

Specifications of ZVN2106G

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 700mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 2.4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Normalised R
ZVN2106G
100
80
60
40
20
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
4
3
2
1
0
Capacitance v drain-source voltage
-80 -60
0
Saturation Characteristics
V
V
-40 -20
T
DS
DS
j
10
1
-Junction Temperature (C°)
DS(on)
- Drain Source Voltage (Volts)
-Drain Source Voltage (Volts)
0 20 40 60 80
and V
2
20
GS(th)
3
30
TYPICAL CHARACTERISTICS
100
v Temperature
120
4
40
V
I
D=
V
I
GS=
D=
GS=
1A
140 160
1mA
10V
V
DS
50
5
C
C
C
V
10V
6V
5V
9V
8V
4V
7V
3V
iss
oss
rss
GS=
3 - 386
0.7
0.6
0.5
0.4
0.3
0.2
0.1
12
16
14
10
0.1
10
0
8
6
4
2
0
1
On-resistance v gate-source voltage
0
1
0
Transconductance v drain current
Gate charge v gate-source voltage
V
0.5
GS
I
D=
1
-Gate Source Voltage (Volts)
3A
I
D
1.0
- Drain Current (Amps)
2
Q-Charge (nC)
1.5
V
DS=
10V
3
V
DD
2.0
20V 30V 50V
=
10
4
2.5
3.0
5
20
0.25A
I
1A
0.5A
D=