2N6794 International Rectifier, 2N6794 Datasheet

N CH MOSFET, 500V, 1.5A, TO-205AF

2N6794

Manufacturer Part Number
2N6794
Description
N CH MOSFET, 500V, 1.5A, TO-205AF
Manufacturer
International Rectifier
Datasheet

Specifications of 2N6794

Transistor Polarity
N Channel
Continuous Drain Current Id
1.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6794
Manufacturer:
ST/MOTO
Quantity:
20 000
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-205AF)
Product Summary
The HEXFET
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 10V, T C = 100°C
I D @ V GS = 10V, T C = 25°C
www.irf.com
Part Number
IRFF420
P D @ T C = 25°C
T STG
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
®
®
technology is the key to International
TRANSISTORS
B
500V
VDSS
R
DS(on)
3.0Ω
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
1.5A
I
D
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
REF:MIL-PRF-19500/555
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
0.98(typical)
500V, N-CHANNEL
-55 to 150
0.242
0.16
±20
1.5
1.0
6.0
2.2
2.0
3.5
20
JANTXV2N6794
T0-39
JANTX2N6794
IRFF420
PD - 90429D
Units
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
g
1

Related parts for 2N6794

2N6794 Summary of contents

Page 1

... REF:MIL-PRF-19500/555 I D 1.5A Features: Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n 300 (0.063 in. (1.6mm) from case for 10s 90429D IRFF420 JANTX2N6794 JANTXV2N6794 500V, N-CHANNEL T0-39 Units 1.5 A 1.0 6 0.16 W/°C ±20 V 0.242 mJ 2 ...

Page 2

... IRFF420, JANTX2N6794, JANTXV2N6794 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com IRFF420, JANTX2N6794, JANTXV2N6794 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 ...

Page 4

... IRFF420, JANTX2N6794, JANTXV2N6794 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage & b Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFF420, JANTX2N6794, JANTXV2N6794 V GS ≤ 1 ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r Fig 10b. Switching Time Waveforms + - t t d(off ...

Page 6

... IRFF420, JANTX2N6794, JANTXV2N6794 D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 15V DRIVER + - (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit 1 ...

Page 7

... Case Outline and Dimensions — TO-205AF(Modified TO-39) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 www.irf.com IRFF420, JANTX2N6794, JANTXV2N6794 ƒ ≤ 1.5A, di/dt ≤ 50A/µ ≤ 500V ≤ 150°C Suggested RG = 7.5 Ω ...

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