IRF5NJ5305 International Rectifier, IRF5NJ5305 Datasheet - Page 2

• Manufacturer Part Number: IRF5NJ5305
• Description: TRANSISTOR,MOSFET,P-CHANNEL,55V V(BR)DSS,22A I(D),SMT
• Manufacturer: International Rectifier

Specifications of IRF5NJ5305

• Rohs Compliant: NO

Electrical Characteristics
Thermal Resistance
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
* Current is limited by package
IRF5NJ5305
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
R thJC
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
BV DSS / T J Temperature Coefficient of Breakdown
(off)
(on)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction-to-Case
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
@ Tj = 25°C (Unless Otherwise Specified)
Min Typ Max Units
—
Min Typ Max Units
—
—
—
—
—
Min
-2.0
-55
8.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.049
1290
1.67
Typ Max Units
495
203
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-1.3
100
250
-22*
-88
0.065
-250
-100
-4.0
100
125
-25
70
17
30
26
56
74
—
—
—
—
—
—
—
°C/W
nC
ns
V
A
V/°C
S ( )
nH
nA
nC
pF
ns
V
V
A
T j = 25°C, I F = -16A, di/dt
T
j
drain pad to center of source pad
= 25°C, I S = -16A, V GS = 0V
Reference to 25°C, I D = -1.0mA
Measured from the center of
V DS = -25V, I DS = -16A
V DS = V GS , I D = -250 A
Test Conditions
V GS = 0V, I D = -250 A
Test Conditions
V GS = 0V, V DS = -25V
V GS = 10V, I D = -16A
V GS =-10V, I D = -16A
V DS = -55V ,V GS =0V
V GS = 0V, T J =125°C
V DD = -28V, I D = -16A,
Test Conditions
V DD
V DS = -44V,
V GS = -20V
V DS = -44V
V GS = 20V
f = 1.0MHz
R G = 6.8
-30V
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100A/ s