IRF820A Vishay, IRF820A Datasheet - Page 6
![N CHANNEL MOSFET, 500V, 2.5A TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF820A
Manufacturer Part Number
IRF820A
Description
N CHANNEL MOSFET, 500V, 2.5A TO-220
Manufacturer
Vishay
Datasheet
1.IRF820APBF.pdf
(8 pages)
Specifications of IRF820A
Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
2.5 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRF820A
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF820A
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF820AL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF820APBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF820AS
Manufacturer:
IR
Quantity:
12 500
IRF820A, SiHF820A
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91057_12c
Vary t
required I
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
300
250
200
150
100
Fig. 12a - Unclamped Inductive Test Circuit
p
Fig. 12b - Unclamped Inductive Waveforms
50
0
to obtain
V
I
25
AS
AS
DS
Starting T
R
10 V
G
V
50
DS
t
p
J
, Junction Temperature (°C)
75
t
p
I
AS
D.U.T
0.01 Ω
L
100
V
DS
Top
Bottom
125
This datasheet is subject to change without notice.
V
DD
1.1 A
1.6 A
2.5 A
+
-
I
V
D
150
DD
A
91057_12d
700
650
600
550
Fig. 13a - Typical Drain-to-Source Voltage vs.
10 V
0.0
Fig. 12d - Basic Gate Charge Waveform
12 V
V
Fig. 13b - Gate Charge Test Circuit
V
G
GS
Same type as D.U.T.
Current regulator
Q
0.5
0.2 µF
GS
I
AV
Avalanche Current
, Avalanche Current (A)
Current sampling resistors
3 mA
50 kΩ
Charge
1.0
Q
0.3 µF
Q
GD
G
I
G
S11-0507-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
1.5
Document Number: 91057
D.U.T.
I
D
2.0
+
-
V
DS
2.5