IRF9540STRRPBF Vishay, IRF9540STRRPBF Datasheet

P CH MOSFET, -100V, 19A, SMD-220

IRF9540STRRPBF

Manufacturer Part Number
IRF9540STRRPBF
Description
P CH MOSFET, -100V, 19A, SMD-220
Manufacturer
Vishay
Datasheet

Specifications of IRF9540STRRPBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-19A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material)
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91079
S10-1728-Rev. B, 02-Aug-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
G D
DD
(Max.) (nC)
(nC)
(V)
(nC)
 - 19 A, dI/dt  200 A/μs, V
= - 25 V, starting T
D
S
()
2
PAK (TO-263)
a
J
= 25 °C, L = 2.7 mH, R
c
a
a
b
V
DD
GS
 V
e
= - 10 V
G
DS
, T
P-Channel MOSFET
e
Single
J
- 100
61
14
29
 175 °C.
D
SiHF9540S-GE3
IRF9540SPbF
SiHF9540S-E3
IRF9540S
SiHF9540S
g
2
C
S
D
PAK (TO-263)
= 25 , I
= 25 °C, unless otherwise noted)
Power MOSFET
V
GS
0.20
at - 10 V
AS
T
= - 19 A (see fig. 12).
C
for 10 s
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Definition
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
2
PAK (TO-263) is suitable for high current
IRF9540S, SiHF9540S
D
SiHF9540STRL-GE3
IRF9540STRLPbF
SiHF9540STL-E3
IRF9540STRL
SiHF9540STL
2
PAK (TO-263)
design,
- 55 to + 175
LIMIT
0.025
a
a
- 100
300
± 20
- 5.5
- 19
- 13
- 72
- 19
640
150
1.0
3.7
15
low
a
Vishay Siliconix
a
d
a
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF9540STRRPBF Summary of contents

Page 1

... Operating Temperature • Fast Switching Single • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. 2 The D PAK (TO-263 surface mount power package capable of accommodating die sizes up to HEX-4. It ...

Page 2

... IRF9540S, SiHF9540S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

Page 3

... DS , 91079_02 Fig Typical Output Characteristics, T Document Number: 91079 S10-1728-Rev. B, 02-Aug- µs Pulse Width °C C 91079_03 = 25 ° 4 µs Pulse Width T = 175 °C C 91079_04 = 175 °C C IRF9540S, SiHF9540S Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3.0 ...

Page 4

... IRF9540S, SiHF9540S Vishay Siliconix 3000 MHz iss gs 2500 rss oss ds 2000 1500 1000 500 Drain-to-Source Voltage ( 91079_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91079_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91079_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91079 S10-1728-Rev. B, 02-Aug-10 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9540S, SiHF9540S Vishay Siliconix D.U. 0.01 Ω Fig. 10a - Switching Time Test Circuit d(on) r d(off) f ...

Page 6

... IRF9540S, SiHF9540S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 2000 Top 1600 Bottom 1200 800 400 100 125 ...

Page 7

... Note a. V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91079. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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