IRF9Z20PBF Vishay, IRF9Z20PBF Datasheet - Page 3

• Manufacturer Part Number: IRF9Z20PBF
• Description: P CHANNEL MOSFET, -50V, 9.7A TO-220
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRF9Z20PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -9.7A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z20PBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 90121
S11-0511-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
90121_01
90121_02
10
0.1
15
12
10
Fig. 2 - Typical Transfer Characteristics
9
6
3
0
2
5
2
5
2
1
5
2
Fig. 1 - Typical Output Characteristics
0
0
80 µs Pulse Test
V
Negative V
Negative V
DS
T
= 2 x V
J
= 150
V
5
2
GS
GS
°
DS
= - 10, - 8 V
GS ,
C
, Drain-to-Source Voltage (V)
Gate-to-Source Voltage (V)
10
4
T
J
= 25
°
15
6
C
80 µs Pulse Test
This datasheet is subject to change without notice.
20
8
- 7 V
- 6 V
- 5 V
- 4 V
10
25
90121_04
90121_03
10
10
0.1
Fig. 4 - Maximum Safe Operating Area
15
12
10
1
9
6
3
0
3
2
5
2
5
2
5
2
5
2
Fig. 3 - Typical Saturation Characteristics
1
0
80 µs Pulse Test
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
Negative V
Negative V
2
1
IRF9Z20, SiHF9Z20
Operation in this area limited
V
GS
DS
DS ,
= - 10
, Drain-to-Source Voltage (V)
5
Drain-to-Source Voltage (V)
T
T
Single Pulse
by R
C
J
2
= 150 °C
= 25 °C
10
www.vishay.com/doc?91000
DS(on)
Vishay Siliconix
3
2
www.vishay.com
- 8 V
4
5
10
100
1
10
DC
- 7 V
- 6 V
- 5 V
- 4 V
ms
µs
ms
µs
10
5
2
3