IRFB18N50K Vishay, IRFB18N50K Datasheet - Page 4

• Manufacturer Part Number: IRFB18N50K
• Description: N CHANNEL MOSFET, 500V, 17A, TO-220
• Manufacturer: Vishay

Specifications of IRFB18N50K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFB18N50K

IRFB18N50K, SiHFB18N50K
Vishay Siliconix
www.vishay.com
4
100000
10000
1000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
20
16
12
8
4
0
1
0
I =
D
17A
V DS , Drain-to-Source Voltage (V)
30
Q , Total Gate Charge (nC)
G
V GS = 0V,
C iss
C rss
C oss = C ds + C gd
10
V
V
V
DS
DS
DS
= C gs + C gd , C ds
= C gd
60
= 400V
= 250V
= 100V
Crss
Ciss
Coss
f = 1 MHZ
90
100
SHORTED
120
1000
150
1000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
100
0.1
0.1
10
10
1
1
Fig. 8 - Maximum Safe Operating Area
0.2
10
T
T
Single Pulse
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
V
T = 150 C
DS
SD
°
J
°
0.5
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
100
°
BY R
0.8
DS(on)
S09-0015-Rev. A, 19-Jan-09
Document Number: 91100
10us
100us
1ms
10ms
T = 25 C
1000
J
1.1
V
°
GS
= 0 V
10000
1.4