IRFBC40LC Vishay, IRFBC40LC Datasheet - Page 5

• Manufacturer Part Number: IRFBC40LC
• Description: N CHANNEL MOSFET, 600V, 6.2A TO-220
• Manufacturer: Vishay

Specifications of IRFBC40LC

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFBC40LC

Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91114_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
2.0
7.0
6.0
5.0
4.0
3.0
1.0
0.0
91114_11
25
10
0.1
10
-2
1
10
50
T
-5
0 − 0.5
0.2
0.1
0.05
0.02
0.01
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
100
-4
Single Pulse
(Thermal Response)
125
This datasheet is subject to change without notice.
10
150
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
IRFBC40LC, SiHFBC40LC
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
Notes:
1. Duty Factor, D = t
2. Peak T
GS
t
d(on)
V
DS
t
r
1
j
= P
P
DM
DM
D.U.T.
x Z
www.vishay.com/doc?91000
t
R
1
1
Vishay Siliconix
thJC
D
/t
2
t
t
d(off)
2
+ T
C
10
t
f
+
-
www.vishay.com
V
DD
5