IRFBC40LCPBF Vishay, IRFBC40LCPBF Datasheet
IRFBC40LCPBF
Specifications of IRFBC40LCPBF
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IRFBC40LCPBF Summary of contents
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... Power S MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications. TO-220AB IRFBC40LCPbF SiHFBC40LC-E3 IRFBC40LC SiHFBC40LC = 25 °C, unless otherwise noted) C SYMBOL ° ...
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... IRFBC40LC, SiHFBC40LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Fig Typical Transfer Characteristics C 3 3.0 4.5 V 2.5 2.0 1.5 1.0 0.5 0 91114_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. Vishay Siliconix ° C ° µs Pulse Width V = 100 Gate-to-Source Voltage ( 6 100 120 140 160 T Junction Temperature (° www ...
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... IRFBC40LC, SiHFBC40LC Vishay Siliconix 2400 MHz iss gs gd 2000 rss oss ds gd 1600 C iss 1200 C oss 800 C 400 rss Drain-to-Source Voltage ( 91114_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 240 180 For test circuit see figure Total Gate Charge (nC) 91114_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFBC40LC, SiHFBC40LC Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRFBC40LC, SiHFBC40LC Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 1200 1000 91114_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91114. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...