IRFU9120PBF Vishay, IRFU9120PBF Datasheet - Page 7
![P CHANNEL MOSFET, -100V, 5.6A, IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
IRFU9120PBF
Manufacturer Part Number
IRFU9120PBF
Description
P CHANNEL MOSFET, -100V, 5.6A, IPAK
Manufacturer
Vishay
Specifications of IRFU9120PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
-5.6A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
600mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.48 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.6 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU9120PBF
Document Number: 91280
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
GS
P.W.
Fig
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
SD
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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