SI2301BDS-T1 Vishay, SI2301BDS-T1 Datasheet - Page 5

• Manufacturer Part Number: SI2301BDS-T1
• Description: P CHANNEL MOSFET, -20V, 2.2A TO-236
• Manufacturer: Vishay

Specifications of SI2301BDS-T1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -950mV
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72066.
Document Number: 72066
S-80427-Rev. D, 03-Mar-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
10
-3
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
10
T
t
A
1
= P
t
2
DM
Z
thJA
thJA
Vishay Siliconix
t
t
1
2
(t)
= 62.5
Si2301BDS
100
°
C/W
www.vishay.com
600
5