SI7447ADP-T1 Vishay, SI7447ADP-T1 Datasheet
SI7447ADP-T1
Specifications of SI7447ADP-T1
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SI7447ADP-T1 Summary of contents
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... T J stg Symbol sec R thJA Steady State Steady State R thJC Si7447DP Vishay Siliconix FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Battery and Load Switching - Notebook Computers - Notebook Battery Packs S D P-Channel MOSFET 10 secs ...
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... Si7447DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... J 1 0.1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 71970 S-21475—Rev. A, 26-Aug-02 New Product = 100 120 T = 25_C J 0.8 1.0 1.2 Si7447DP Vishay Siliconix Capacitance 10000 8000 C iss 6000 4000 C 2000 oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si7447DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 = 250 0.2 0.0 -0.2 -0.4 -50 - Temperature (_C) J Limited by r DS(on) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0. Document Number: 71970 S-21475—Rev. A, 26-Aug-02 New Product - Square Wave Pulse Duration (sec) Si7447DP Vishay Siliconix 1 10 www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...