SUD40N08-16-T1-E3 Vishay, SUD40N08-16-T1-E3 Datasheet
SUD40N08-16-T1-E3
Specifications of SUD40N08-16-T1-E3
Related parts for SUD40N08-16-T1-E3
SUD40N08-16-T1-E3 Summary of contents
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... DS DS(on) 80 0.016 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD40N08-16 SUD40N08-16—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b b Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... SUD40N08-16 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... V − Drain-to-Source Voltage (V) DS Document Number: 71323 S-40272—Rev. C, 23-Feb-04 100 0.04 25_C 0.03 125_C 0.02 0.01 0.00 80 100 iss SUD40N08-16 Vishay Siliconix Transfer Characteristics T = 125_C C 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge V ...
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... SUD40N08-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0.0 −50 − − Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 100 T − Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...