SUD50N03-09P-T1-E3 Vishay, SUD50N03-09P-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N03-09P-T1-E3
• Description: N CHANNEL MOSFET, 30V, 63A
• Manufacturer: Vishay

Specifications of SUD50N03-09P-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 63A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 65.2W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N03-10
Siliconix
Typical Characteristics (25 C Unless Otherwise Noted)
Thermal Ratings
4
0.01
0.1
2
1
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
10
On-Resistance vs. Junction Temperature
–4
Duty Cycle = 0.5
V
I
0.02
0.05
D
GS
0.2
0.1
= 50 A
= 10 V
Maximum Drain Current vs.
T
T
J
A
Ambient Temperature
– Junction Temperature ( C)
– Ambient Temperature ( C)
S-57253—Rev. E, 24-Feb-98
10
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
10
–2
Square Wave Pulse Duration (sec)
Siliconix was formerly a division of TEMIC Semiconductors
Phone [phone]
500
100
100
0.1
10
10
10
1
1
–1
0.1
by r
Limited
0
DS(on)
Source-Drain Diode Forward Voltage
FaxBack [phone]
V
V
0.3
SD
T
DS
J
= 175 C
Single Pulse
– Source-to-Drain Voltage (V)
– Drain-to-Source Voltage (V)
Safe Operating Area
T
A
1
= 25 C
0.6
1
0.9
www.siliconix.com
T
10
J
= 25 C
1.2
10, 100 s
1 ms
10 ms
100 ms
1 s
dc
10
100
1.5
30