SUD50N03-11-T1-E3 Vishay, SUD50N03-11-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N03-11-T1-E3
• Description: N CHANNEL MOSFET, 30V, 50A
• Manufacturer: Vishay

Specifications of SUD50N03-11-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 17mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 62.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N03-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
2.0
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
0.01
0
- 50 - 25
0.1
0
2
1
http://www.vishay.com/ppg?71187.
On-Resistance vs. Junction Temperature
10
0.2
V
I
D
-4
0.1
Duty Cycle = 0.5
GS
Maximum Avalanche Drain Current
25
= 25 A
= 10 V
Single Pulse
0
T
T
0.05
J
vs. Case Temperature
50
C
- Junction Temperature (°C)
0.02
25
- Case Temperature (°C)
75
50
10
-3
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
10
-2
175
175
Square Wave Pulse Duration (s)
10
-1
100
500
100
0.1
10
10
1
1
0.1
0
* V
GS
Source-Drain Diode Forward Voltage
0.3
by R
T
minimum V
V
V
Limited
J
DS
SD
= 150 °C
Single Pulse
DS(on) *
Safe Operating Area
T
- Source-to-Drain Voltage (V)
- Drain-to-Source Voltage (V)
C
1
= 25 °C
1
0.6
GS
at which R
S-81225-Rev. D, 02-Jun-08
Document Number: 71187
0.9
T
DS(on)
10
J
= 25 °C
is specified
1.2
10
10 µs
100 µs
10 ms
100 ms
1 s, DC
100
1.5
30