NTE5426 NTE ELECTRONICS, NTE5426 Datasheet
NTE5426
Manufacturer Part Number
NTE5426
Description
SCR THYRISTOR, 10A, 400V, TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5426.pdf
(2 pages)
Specifications of NTE5426
Peak Repetitive Off-state Voltage, Vdrm
400V
Gate Trigger Current Max, Igt
0.2mA
Current It Av
10A
On State Rms Current It(rms)
10A
Peak Non Rep Surge Current Itsm 50hz
80A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device
may be switched from off−state to conduction by a current pulse applied to the gate terminal and is
designed for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (Gate Open, T
Repetitive Peak Reverse Voltage (Gate Open, T
RMS On−State Current (T
Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50 or 60Hz), I
Peak Gate−Trigger Current (3μs max), I
Peak Gate−Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (T
Peak Off−State Current
Maximum On−State Voltage
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
DC Holding Current
Turn−On Time
Critical Rate of Rise of Off−State
Voltage
Parameter
Silicon Controlled Rectifier (SCR)
C
Sensitive Gate, TO220 Isolated
= +80°C, 180° Conduction Angle), I
stg
C
GT
opr
= +25°C and “Maximum Ratings” unless otherwise specified)
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= I
G(AV)
critical
I
dv/dt
I
DRM
V
V
RRM
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
t
GT
GTM
TM
GT
H
gt
GTM
,
), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5426
Rated V
RG − K = 1kΩ
I
Anode Voltage = 12V, R
Anode Voltage = 12V, R
Gate Open, RG − K = 1kΩ
(t
Gate Open, T
RG − K = 1kΩ
T
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
= Rated Amps
+ t
r
C
) I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
thJC
= +110°C), V
GT
Test Conditions
= +110°C), V
= 150mA
or V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +110°C,
RRM
, T
C
RRM
L
L
T(RMS)
= +110°C,
DRM
= 60Ω
= 60Ω
. . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
TSM
Min
−
−
−
−
−
−
−
. . . . . . . . . . . . .
Typ
−
−
−
−
−
−
8
−40° to +100°C
−40° to +150°C
Max
200
0.1
2.0
0.8
3.0
2.5
−
3.0°C/W
500mW
V/μs
Unit
400V
400V
mA
mA
16W
μA
μs
V
V
10A
80A
1A
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NTE5426 Summary of contents
Page 1
... Sensitive Gate, TO220 Isolated Description: The NTE5426 is silicon controlled rectifier (SCR isolated tab TO220 type package. This device may be switched from off−state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switching relays. ...
Page 2
Dia Max .070 (1.78) Max Cathode .100 (2.54) Max .110 (2.79) Isol .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Gate Anode ...