NTE5453 NTE ELECTRONICS, NTE5453 Datasheet - Page 2
![SILICON CONTROLLED RECTIFIER,50V V(DRM),4A I(T),TO-202](/photos/40/18/401880/4767610_sml.jpg)
NTE5453
Manufacturer Part Number
NTE5453
Description
SILICON CONTROLLED RECTIFIER,50V V(DRM),4A I(T),TO-202
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5455.pdf
(2 pages)
Specifications of NTE5453
Rohs Compliant
YES
Peak Repetitive Off-state Voltage, Vdrm
50V
Gate Trigger Current Max, Igt
200µA
Current It Av
4A
On State Rms Current It(rms)
4A
Peak Non Rep Surge Current Itsm 50hz
20A
Holding Current Max Ih
3mA
Electrical Characteristics:
Peak Off−State Current
Maximum On−State Voltage
DC Holding Current
DC Gate−Trigger Current
DC Gate−Trigger Voltage
Total Gate Controlled
I
Critical rate of Applied
2
t for Fusing Reference
Turn−On Time
Forward Voltage
Parameter
(30.48)
1.200
Ref
.100 (2.54)
(12.7)
(7.62)
(9.65)
.500
.300
.380
Min
Symbol
(critical)
I
I
dv/dt
I
DRXM
HOLD
V
V
RRM
I
I
t
GT
TM
2
GT
gt
t
.380 (9.56)
A
V
T
T
T
V
V
T
> 1.5msoc
R
K
C
C
C
C
RRM
D
D
G−K
= +100°C, R
= +25°C, I
= +25°C
= +25°C
= 6VDC, R
= 6VDC, R
A
= 1kΩ, T
= Max, V
Test Conditions
G
T
L
L
C
DRXM
= 4A (Peak)
(9.52)
.132 (3.35) Dia
G−K
= 100Ω, T
= 100Ω, T
.325
= +100°C
.070 (1.78) x 45°
= 1kΩ
= Max,
.050 (1.27)
.100 (2.54)
.180 (4.57)
C
C
Chamf
= +25°C
= +25°C
Min
−
−
−
−
−
−
−
−
−
Typ
1.2
50
−
−
−
−
−
−
8
Max
100
100
200
2.2
0.8
0.5
3
−
−
A
Unit
V/μs
mA
2
μA
μA
μA
μs
V
V
sec