NTE5453 NTE ELECTRONICS, NTE5453 Datasheet - Page 2

• Manufacturer Part Number: NTE5453
• Description: SILICON CONTROLLED RECTIFIER,50V V(DRM),4A I(T),TO-202
• Manufacturer: NTE ELECTRONICS

Specifications of NTE5453

• Rohs Compliant: YES
• Peak Repetitive Off-state Voltage, Vdrm: 50V
• Gate Trigger Current Max, Igt: 200µA
• Current It Av: 4A
• On State Rms Current It(rms): 4A
• Peak Non Rep Surge Current Itsm 50hz: 20A
• Holding Current Max Ih: 3mA

Electrical Characteristics:
Peak Off−State Current
Maximum On−State Voltage
DC Holding Current
DC Gate−Trigger Current
DC Gate−Trigger Voltage
Total Gate Controlled
I
Critical rate of Applied
2
t for Fusing Reference
Turn−On Time
Forward Voltage
Parameter
(30.48)
1.200
Ref
.100 (2.54)
(12.7)
(7.62)
(9.65)
.500
.300
.380
Min
Symbol
(critical)
I
I
dv/dt
I
DRXM
HOLD
V
V
RRM
I
I
t
GT
TM
2
GT
gt
t
.380 (9.56)
A
V
T
T
T
V
V
T
> 1.5msoc
R
K
C
C
C
C
RRM
D
D
G−K
= +100°C, R
= +25°C, I
= +25°C
= +25°C
= 6VDC, R
= 6VDC, R
A
= 1kΩ, T
= Max, V
Test Conditions
G
T
L
L
C
DRXM
= 4A (Peak)
(9.52)
.132 (3.35) Dia
G−K
= 100Ω, T
= 100Ω, T
.325
= +100°C
.070 (1.78) x 45°
= 1kΩ
= Max,
.050 (1.27)
.100 (2.54)
.180 (4.57)
C
C
Chamf
= +25°C
= +25°C
Min
−
−
−
−
−
−
−
−
−
Typ
1.2
50
−
−
−
−
−
−
8
Max
100
100
200
2.2
0.8
0.5
3
−
−
A
Unit
V/μs
mA
2
μA
μA
μA
μs
V
V
sec