NTE5558 NTE ELECTRONICS, NTE5558 Datasheet - Page 2

• Manufacturer Part Number: NTE5558
• Description: SCR THYRISTOR, 16A, 800V, TO-220
• Manufacturer: NTE ELECTRONICS

Specifications of NTE5558

• Peak Repetitive Off-state Voltage, Vdrm: 800V
• Gate Trigger Current Max, Igt: 25mA
• Current It Av: 16A
• On State Rms Current It(rms): 25A
• Peak Non Rep Surge Current Itsm 50hz: 300A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Peak Forward Blocking Voltage, (T
Peak Forward or Reverse Blocking Current,
Forward “ON” Voltage, (I
Gate Trigger Current (Continuous DC),
Gate Trigger Voltage (Continuous DC)
Gate Non−Trigger Voltage
Holding Current
Turn−On Time
Turn−Off Time (V
Critical Rate of Rise of Off−State Voltage
NTE5550
NTE5552
NTE5554
NTE5556
NTE5558
(Rated V
(Anode Voltage = 12Vdc, R
(Anode Voltage = 12Vdc, R
(Anode Voltage = Rated V
(Anode Voltage = 12Vdc, T
(I
(I
(I
(Gate Open, Rated V
TM
TM
TM
= 25A, I
=25A, I
=25A, I
DRM
R
R
GT
or V
= 25A)
= 25A, T
DRM
= 50mAdc)
RRM
= rated voltage)
Parameter
TM
DRM
)
J
= +125°C)
= 50A, Note 2)
, Exponential Waveform)
DRM
.070 (1.78) Max
C
.147 (3.75)
C
Dia Max
L
L
= 100Ω)
= 100Ω, T
= −40°C)
, R
Cathode
.100 (2.54)
J
L
= +125°C)
=100Ω, T
C
T
T
T
T
.420 (10.67)
= −40°C)
J
J
C
C
J
Max
= +25°C
= +125°C
= +25°C
= −40°C
= +125°C)
.250 (6.35)
Max
Gate
Anode/Tab
(12.7)
(12.7)
.500
.500
Max
.110 (2.79)
Min
I
DRM
Symbol
V
dv/dt
V
V
V
I
DRM
t
GT
I
t
, I
GD
TM
GT
gt
H
q
RRM
Min
200
400
600
800
0.2
50
−
−
−
−
−
−
−
−
−
−
−
Typ Max Unit
1.5
25
35
15
35
50
−
−
−
−
−
−
−
−
−
1
−
1.8
1.5
10
40
75
40
−
−
−
−
−
2
−
2
−
−
−
V/μs
mA
mA
mA
μA
μs
μs
V
V
V
V