NTE5572 NTE ELECTRONICS, NTE5572 Datasheet

SCR THYRISTOR, 80A, 600V, TO-94

NTE5572

Manufacturer Part Number
NTE5572
Description
SCR THYRISTOR, 80A, 600V, TO-94
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE5572

Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max, Igt
120mA
Current It Av
80A
On State Rms Current It(rms)
125A
Peak Non Rep Surge Current Itsm 50hz
1.9kA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics: (Maximum values @ T
Repetitive Peak Voltages, V
Non−Repetitive Peak Reverse Blocking Voltage, V
Average On−State Current (Half Sine Wave, 180°, T
RMS On−State Current (DC @ T
Peak One−Cycle, Non−Repetitive Surge Current (10ms Duration, Sinusoidal Half Wave), I
Maximum I
Peak Positive Gate Current (5ms Pulse Width), I
Peak Positive Gate Voltage (5ms Pulse Width), +V
Peak Negative Gate Voltage (5ms Pulse Width), −V
Average Gate Power (f = 50Hz, Duty Cycle = 50%), P
Peak Gate Power (50ms Pulse Width), P
Rate of Rise of Off−State Voltage (Exponential to 67% Rated V
Rate of Rise of ON−State Current, di/dt
Typical Delay Time, t
Typical Turn−On Time, t
On−State Voltage (I
Repetitive Peak Off−State Current (At V
Repetitive Peak Reverse Current (At V
Maximum Gate Current Required to Trigger, I
Maximum Gate Voltage Required to Trigger, V
Maximum Holding (Anode Supply 12V Resistive Load, T
Maximum Gate Voltage which will not Trigger any Device, V
NTE5570
NTE5572
NTE5574
NTE5570
NTE5572
NTE5574
No Voltage Reapplied
100% V
No Voltage Reapplied
100% V
(Gate Drive 20V, 65Ω, with t
(Gate Pulse: 10V, 15Ω Source, t
(I
(6V Anode−to−Cathode Applied, T
(6V Anode−to−Cathode Applied, T
TM
Non−Repetitive
2
= 50A, di/dt = −5A/μs min, V
t for Fusing (10ms Duration, Sinusoidal Half Wave), I
RRM
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Reapplied
Reapplied
Pk
d
= 250A, 10ms Sine Pulse), V
q
Silicon Controlled Rectifier (SCR)
NTE5570, NTE5572, & NTE5574
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
& V
C
r
= +75°C), I
= 0.5μs, V
RRM
R
125 Amp, TO94
RRM
p
DRM
= 50V, dv/dt = 20V/μs, Gate Bias: 0V 25Ω, t
= 6μs, t
GM
J
J
= +25°C)
= +25°C)
), I
), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GT
RRM
T(RMS)
d
GT
DRM
= Rated V
r
GM
= 0.1μs, V
RSM
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TM
GM
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125°C unless otherwise specified)
G
= +85°C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), I
DRM
d
GD
= rated V
, I
DRM
. . . . . . . . . . . . . . . . . . . . . . . . .
TM
2
T(AV)
t
), dv/dt
= 2 x di/dt snubber 0.2μF)
H
DRM
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
, I
TM
= 50A)
p
= 500μs) 110μs
18000A
12700A
. . . . . .
500V/μs
300A/μs
TSM
120mA
150mA
1200V
1300V
1900A
1600A
15mA
15mA
0.25V
200V
600V
500V
900V
125A
12W
1.6V
2.5V
2
2
80A
20V
10V
1μs
sec
sec
3W
3A

Related parts for NTE5572

NTE5572 Summary of contents

Page 1

... NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier (SCR) Electrical Characteristics: (Maximum values @ T Repetitive Peak Voltages, V NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Operating Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction−to−Case (DC Operation), R Thermal Resistance, Case−to−Heat Sink, R (Mounting Surface Smooth, Flat, and Greased) 7.500 (190.5) Max (Terminals 1 & 2) 1.031 (26.18) Seating Plane . . . . ...

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