NTE5471 NTE ELECTRONICS, NTE5471 Datasheet - Page 2
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NTE5471
Manufacturer Part Number
NTE5471
Description
SILICON CONTROLLED RECTIFIER,100V V(DRM),5A I(T),TO-208AB
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5470.pdf
(2 pages)
Electrical Characteristics: (T
Note 3. For optimum operation, i.e. faster turn–on, lower switching losses, best di/dt capability,
Note 4. Pulsed, 1ms Max, Duty Cycle
Peak Forward or Reverse Blocking Current
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
Forward “ON” Voltage
Holding Current
Turn–On Time (t
Turn–Off Time
Forward Voltage Application Rate
(Exponential)
recommended I
Parameter
d
+ t
r
)
GT
= 200mA minimum.
C
(111.5)
(10.98
Gate
(21.7)
.431
Max
.855
Max
.453
Max
= +25 C unles otherwise specified)
Symbol
I
dv/dt
I
DRM
V
v
RRM
I
t
t
GT
I
TM
on
off
GT
H
1%.
,
Rated V
Gate Open
V
Note 3
V
I
V
I
I
V
dv/dt = 30V/ s
Gate Open, T
V
G
F
TM
D
D
D
D
D
= 5A, I
= 20mA, I
= Rated V
= 7V, R
= 7V, R
= 7V, Gate Open
= Rated V
= 15.7A, Note 4
DRM
R
Test Conditions
= 5A,
L
L
F
= 100 ,
= 100
or V
DRM
= 5A, V
DRM
J
= +100 C,
10–32 UNF–2A
,
RRM
Cathode
.125 (3.17) Max
Anode
D
, T
= Rated V
T
T
T
T
T
T
J
J
C
C
J
C
J
= +25 C
= +100 C
= +100 C
= +100 C
= –40 C
= –40 C
= –40 C
DRM
Min
0.2
–
–
–
–
–
–
–
–
–
–
–
–
–
0.75
Typ
1.4
10
10
15
25
50
–
–
–
–
–
–
1
Max Unit
1.5
2.5
2.0
10
30
60
30
60
2
–
–
–
–
–
V/ s
mA
mA
mA
mA
mA
V
V
V
V
A
s
s
s