NTE5483 NTE ELECTRONICS, NTE5483 Datasheet
NTE5483
Manufacturer Part Number
NTE5483
Description
SILICON CONTROLLED RECTIFIER,200V V(DRM),8A I(T),TO-208AB
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5480.pdf
(3 pages)
Specifications of NTE5483
Rohs Compliant
YES
Description:
The NTE5480 through NTE5487 are multi−purpose PNPN silicon controlled rectifiers in a TO64 type
package suited for industrial and consumer applications. These 8 amp devices are available in volt-
ages ranging from 25V to 600V.
Features:
D Uniform Low−Level Noise−Immune Gate Triggering: I
D Low Forward “ON” Voltage: v
D High Surge−Current Capability: I
D Shorted Emitter Construction
Absolute Maximum Ratings: (T
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
Forward Current RMS, I
Peak Forward Surge Current (One Cycle, 60Hz, T
Circuit Fusing (t ≤ 8.3ms, T
Peak Gate Power, P
Average Gate Power, P
Peak Gate Current, I
Peak Gate Voltage (Note 2), V
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
Typical Thermal Resistance, Case−to−Ambient, R
Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a
NTE5480
NTE5481
NTE5482
NTE5483
NTE5484
NTE5485
NTE5486
NTE5487 (This device is discontinued)
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
negative potential applied to the anode.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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GM
GM
G(AV)
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
J
= −40° to +100°C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5480 thru NTE5487
T
J
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1V Typ @ 5A @ +25°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= −40° to +100°C unless otherwise specified)
TSM
8 Amp, TO64
= 100A Peak
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t
thJA
J
thJC
= −40° to +100°C, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GT
= 10mA Typ @ T
DRM
TSM
or V
. . . . . . . . . . . . . . .
RRM
C
= +25°C
−40° to +100°C
−40° to +150°C
1.5°C/W
50°C/W
40A
100V
200V
300V
400V
500V
600V
100A
0.5W
25V
50V
10V
5W
8A
2A
2
s
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NTE5483 Summary of contents
Page 1
... NTE5483 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Parameter Peak Forward or Reverse Blocking Current Gate Trigger Current (Continuous DC) Gate Trigger Voltage (Continuous DC) Forward “ON” Voltage Holding Current Turn−On Time ( Turn−Off Time Forward Voltage Application Rate (Exponential) Note 3. For ...
Page 3
Max Gate .855 (21.7) Max .453 (111.5) Max 10−32 UNF−2A Cathode .125 (3.17) Max Anode ...