NTE5546 NTE ELECTRONICS, NTE5546 Datasheet - Page 2

• Manufacturer Part Number: NTE5546
• Description: SILICON CONTROLLED RECTIFIER,500V V(DRM),35A I(T),TO-208AA
• Manufacturer: NTE ELECTRONICS

Peak Off−State Current
Maximum On−State Voltage (Peak)
DC Gate Trigger Current
DC Gate Trigger Voltage
Gate Controlled Turn−On Time
Critical Rate of Rise of
Off−State Voltage
Parameter
(14.28)
(30.33)
Gate
(11.5)
1.193
.562
.453
Max
Max
Max
(Critical)
Symbol
I
I
dv/dt
DRM
V
RRM
I
I
HO
GT
t
GT
gt
,
V
T
T
Anode Voltage = 12V, R
T
Anode Voltage = 12V, R
T
I
Gate Open, T
GT
J
C
C
C
DRM
= +100°C, Gate Open
= +25°C
= +25°C
= +25°C
= 150mA
& V
RRM
Test Conditions
C
= Max Rating,
= +100°C
L
L
= 30Ω,
= 30Ω,
1/4−28 UNF−2A
Cathode
Anode
.200 (5.08) Max
Min
−
−
−
−
−
−
Typ
100
2.5
−
−
−
−
Max Unit
2.0
2.0
50
30
−
−
V/μs
mA
mA
mA
μs
V