NTE5551 NTE ELECTRONICS, NTE5551 Datasheet - Page 2
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NTE5551
Manufacturer Part Number
NTE5551
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),668A I(T),TO-200var58W
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5551.pdf
(2 pages)
Specifications of NTE5551
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings (Cont’d): (T
Peak On−State Voltage (I
Forward Conduction Threshold Voltage, V
Forward Conduction Slope Resistance, r
Repetitive Peak Off−State Current (At V
Repetitive Peak Reverse Current (At V
Maximum Gate Current (V
Maximum Gate Voltage (V
Maximum Holding Current (V
Maximum Gate Voltage Which Will Not Trigger Any Device, V
.030 (.762) Min
.030 (.762) Min
(14.22)
.560
(41.91)
1.650
Max
TM
A
A
= 6V, I
= 6V, I
= 840A), V
A
= 6V, I
A
A
= 1A, T
= 1A, T
A
(41.91)
RRM
(19.18)
= 1A, T
1.650
TM
.755
DRM
Max
Max
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
), I
J
J
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
), I
= +125C unless otherwise specified)
= +25C), I
= +25C), V
RRM
J
DRM
= +25C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GT
GT
.145 (3.7) Dia Max
H
Cathode
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
GD
8.500 (21.59)
. . . . . . . . . . . . . . . . . . . . . . .
Max
For No. 6
Cathode Potential (Red)
Screws
Marking
Anode
Gate (White)
0.99m
150mA
600mA
1.75V
0.92V
20mA
20mA
0.25V
3V