NTE5590 NTE ELECTRONICS, NTE5590 Datasheet
NTE5590
Manufacturer Part Number
NTE5590
Description
SILICON CONTROLLED RECTIFIER,200V V(DRM),470A I(T),TO-200AB
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5590.pdf
(2 pages)
Absolute Maximum Ratings: (T
Repetitive Peak Voltages, V
Non−Repetitive Peak Reverse Blocking Voltage, V
Average On−State Current (Half Sine Wave), I
RMS On−State Current (T
Continuous On−State Current (T
Peak One−Cycle Surge (10ms duration, 60% V
Non−Repetitive On−State Current (10ms duration, V
Maximum Permissible Surge Energy (V
Peak Forward Gate Current (Anode positive with respect to cathode), I
Peak Forward Gate Voltage (Anode positive with respect to cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power (100μs pulse width), P
Rate of Rise of Off−State Voltage (To 80% V
Rate of Rise of On−State Current, di/dt
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Heatsink, R
NTE5590
NTE5591
NTE5592
NTE5597
NTE5590
NTE5591
NTE5592
NTE5597
T
T
10ms duration
3ms duration
(Gate drive 20V, 20Ω with t
(For a device with a maximum forward voltage drop characteristic)
hs
hs
Repetitive
Non−Repetitive
Double Side Cooled
Single Side Cooled
= +55°C (Double Side Cooled)
= +85°C (Single Side Cooled)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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NTE5590, NTE5591, NTE5592, NTE5597
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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G
Silicon Controlled Rectifier (SCR)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
= +25°C, Double Side Cooled), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RGM
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
hs
hs
J
r
DRM
= +25°C, Double Side Cooled), I
≤ 1μs, anode voltage ≤ 80% V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
470 Amp, TO200AB
= +125°C unless otherwise specified)
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
R
GM
≤ 10V), I
DSM
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DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
th(j−hs)
T(AV)
RRM
gate open−circuit), dv/dt
2
RSM
t
re−applied), I
R
≤ 10V), I
T(RMS)
TSM (2)
TSM (1)
DRM
T
. . . . . . . . . . . . . . . . . . . . .
)
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. . . . . . . . . . . . . . . . . . .
FGM
FGM
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−40° to +125°C
−40° to +150°C
131000A
0.095°C/W
0.190°C/W
97350A
1000A/μs
200V/μs
500A/μs
1200V
1600V
1300V
1700V
4650A
5120A
100W
200V
600V
300V
700V
470A
160A
780A
668A
19A
18V
2W
5V
2
2
s
s
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NTE5590 Summary of contents
Page 1
... NTE5590, NTE5591, NTE5592, NTE5597 Silicon Controlled Rectifier (SCR) Absolute Maximum Ratings: (T Repetitive Peak Voltages, V NTE5590 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Peak On−State Voltage (I TM Forward Conduction Threshold Voltage, V Forward Conduction Slope Resistance, r Repetitive Peak Off−State Current (At V Repetitive Peak Reverse Current (At V Maximum Gate Current (V A Maximum Gate Voltage (V A Maximum Holding Current ...