CYNB16-400 C3 SEMI, CYNB16-400 Datasheet
CYNB16-400
Manufacturer Part Number
CYNB16-400
Description
SCR THYRISTOR, 10A, 400V, TO-220AB
Manufacturer
C3 SEMI
Datasheet
1.CYNA16-800.pdf
(2 pages)
Specifications of CYNB16-400
Peak Repetitive Off-state Voltage, Vdrm
400V
Gate Trigger Current Max, Igt
25mA
Current It Av
10A
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
190A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
• Motor Control
• Overvoltage Crowbar Protection
• Capacitive Discharge Ignition
• Voltage Regulation
• Welding Equipment
• Capacitive Filter Soft Start
ISO9001 Certified
TO-220AB Non-Isolated
(Inrush Current Control)
TO-220AB Isolated
K
K
(CYNA25)
(CYNB25)
A
A
G
G
G
A
K
C3 Semiconductor, LLC
A
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Average On-State Current
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25
I
Critical rate of rise of on-state current
I
Peak Gate Current @ T
Average Gate Power Dissipation @ Tj = 125
S
O
s I
M
Electrical Characteristics
I
V
V
I
I
dv/dt MIN @ V
V
I
I
GENERAL NOTES
2
G
GT
H
L
DRM
RRM
1. All parameters at 25 degrees C unless otherwise specified.
o t
GT
GD
TM
p
t
l o
=2 x I
x a
MAX @ I
MAX @ I
r e
a V
a r
MAX @ V
i t a
MAX @ V
MIN @ V
m i
MAX @ I
i t a
MAX @ V
MAX @ V
e g
u l
n o
u
GT
f e
g n
m
e T
o V
, tr<100 ns, T
r o
J
P
m
G
T
n u
a t l
e
u f
e p
= 1.2 I
D
=
k a
D
TM
>
>
>
D
i t c
e g
i s
=12 V, R
D
DRM =
5
DRM =
=V
a r
=12 V, R
0 0
R
Suitable for General Purpose AC Switching
IGT 25 mA Max.
VDRM/VRMM 400, 600, 800, 1000V
g n
= 67%V
=
n o
u t
C (
v e
DRM
2 3
m
GT
e r
Y
e T
r e
V
A
, A
V
N
, R
R
e s
RRM
j
RRM
m
A
L
(
= 125
j
L
n a
a g
p t
=
e p
= 30Ω
DRM
˚
L
S
= 30Ω
G
) C
= 3.3kΩ
1
e g
=
e
e t
a r
a
5 2
i r
e t
3
˚
o
(
u t
s e
0 8
C ˚
a g
C
e p
o V
e r
s µ
n o
e t
) n
a t l
R
) y l
o
n a
e g
NOTE 1
e p
e g
) n
˚
C
Tc = 110
Tc = 95
Tj = 125
T
T
T
T
Tc = 110°C
Tc = 95°C
= j
= j
= j
= j
1
5 2
5 2
1
5 2
5 2
C ˚
C ˚
˚
˚
C ˚
C ˚
˚
C
C
C
TO-220AB Iso
TO-220AB Iso
CONDITIONS
p t
TO-220AB
TO-220AB
p t
F =50 Hz
F
=
=
CYNA/CYNB16
=
0 6
0 1
0 2
16Amp - 400/600/800/1000V -
z H
m
s µ
s
SYMBOL
5
P
I
25mA
0 4
60mA
0 0
T(RMS)
V
I
I
G
2
V
1.3V
. 0
. 1
µ 5
T(AV)
T
di/dt
I
TSM
RGM
I
GM
m
T
ISO
2
A (
stg
m
/ V
V 2
V 6
j
t
A
A
A
) V
s µ
-40 to +150
-40 to +125
2500V
RATING
180A
100A/µs
190A
200A
16A
10A
1
4A
5V
W
RMS
2
s
SCR
˚
˚
C
C
Related parts for CYNB16-400
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
SCR THYRISTOR, 10A, 1KV, TO-220AB
Manufacturer:
C3 SEMI
Datasheet:
Part Number:
Description:
SCR THYRISTOR, 10A, 600V, TO-220AB
Manufacturer:
C3 SEMI
Datasheet:
Part Number:
Description:
SCR THYRISTOR, 10A, 800V, TO-220AB
Manufacturer:
C3 SEMI
Datasheet:
Part Number:
Description:
SCR, 16A, 1000V, Non-Isolated, TO-220AB, Tube
Manufacturer:
C3 SEMI
Datasheet:
Part Number:
Description:
STANDARD DIODE, 9.5A, 400V TO-220AB
Manufacturer:
C3 SEMI
Datasheet:
Part Number:
Description:
STANDARD DIODE, 9.5A, 600V TO-220AB
Manufacturer:
C3 SEMI
Datasheet:
Part Number:
Description:
STANDARD DIODE, 15.9A 400V TO-220AB
Manufacturer:
C3 SEMI
Datasheet:
Part Number:
Description:
STANDARD DIODE, 15.9A 600V TO-220AB
Manufacturer:
C3 SEMI
Datasheet:
Part Number:
Description:
STANDARD DIODE, 12.7A 800V TO-220AB
Manufacturer:
C3 SEMI
Datasheet:
CYNB16-400 Summary of contents
Page 1
... DRM 67 ˚ D DRM = µ ˚ ˚ DRM = RRM ˚ DRM = RRM CYNA/CYNB16 16Amp - 400/600/800/1000V - SCR CONDITIONS SYMBOL RATING TO-220AB I 16A T(RMS) TO-220AB Iso TO-220AB I 10A T(AV) TO-220AB Iso F =50 Hz 190A I TSM 200A 180A 2 s di/dt 100A/µ µ ˚ T -40 to +150 ...
Page 2
... For recommended applications and more information contact: For recommended applications and more information contact: USA : Sales Support USA : Sales Support (888) 882-8689 C3 Semiconductors, LLC. 2320 Paseo de las Americas, Ste. 104, San Diego, CA 92154 Email : sales@c3semi.com WEB SITE: http://www.C3semi.com CYNA/CYNB16 16Amp - 400/600/800/1000V - SCR SYMBOL RATING ˚ ...