NTE52 NTE ELECTRONICS, NTE52 Datasheet
NTE52
Manufacturer Part Number
NTE52
Description
BIPOLAR TRANSISTOR, NPN, 450V
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE52.pdf
(3 pages)
Specifications of NTE52
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
450V
Power Dissipation Pd
125W
Dc Collector Current
5A
Dc Current Gain Hfe
8
Operating Temperature Range
-65°C To +200°C
No. Of Pins
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTE5264A
Manufacturer:
NTE
Quantity:
20 000
Description:
The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
line–operated switch–mode appliations.
Applications:
D Switching Regulators
D Motor Controls
D Inverters
D Solenoid and Relay Drivers
Features:
D Fast Turn–Off Times:
D Operating Temperature Range: –65 to +200 C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperatur Range, T
Storage Temperatur Range, T
Thermal Resistance, Junction–to–Case, R
Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
100ns Inductive Fall Time @ +25 C (Typ)
150ns Inductive Crossover Time @ +25 C (Typ)
400ns Inductive Storage Time @ +25 C (Typ)
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Derate Above 25 C
B
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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EB
High Voltage, High Speed Switch
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
CEV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +100 C), P
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
J
D
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE52
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
L
. . . . . . . . . . . . . . .
–65 to +200 C
–65 to +200 C
0.714W/ C
1.4 C/W
+275 C
71.5W
125W
450V
750V
6V
5A
8A
2A
4A
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NTE52 Summary of contents
Page 1
... High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for line–operated switch–mode appliations. Applications: ...
Page 2
Electrical Charactetristics: (T Parameter OFF Characteristics (Note 2) Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Output Capacitance Switching Characteristics (Resistive Load) Delay Time ...
Page 3
Max .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) Base .875 (22.2) Dia Max .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max .525 (13.35) R Max Collector/Case Seating Plane ...