BCM62B NXP Semiconductors, BCM62B Datasheet - Page 3

• Manufacturer Part Number: BCM62B
• Description: TRANSISTOR,PNP/PNP MATCHED,SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCM62B

• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -45V
• Gain Bandwidth Ft Typ: 175MHz
• Power Dissipation Pd: 390mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 290
• Rohs Compliant: Yes

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BCM62B_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
[1]
Symbol
Per transistor TR1
V
V
Per transistor
V
I
I
P
Per device
P
T
T
T
Symbol
Per transistor
R
Per device
R
C
CM
j
amb
stg
CBO
CEO
EBS
tot
tot
th(j-a)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 02 — 28 August 2009
Conditions
in free air
in free air
Conditions
open emitter
open base
V
single pulse;
t
T
T
p
amb
amb
CB
1 ms
= 0 V
25 C
25 C
PNP/PNP matched double transistor
[1]
[1]
Min
-
-
[1]
[1]
Min
-
-
-
-
-
-
-
-
65
65
Typ
-
-
BCM62B
© NXP B.V. 2009. All rights reserved.
Max
220
390
150
+150
+150
50
45
5
100
200
Max
568
321
Unit
V
V
V
mA
mA
mW
mW
C
C
C
Unit
K/W
K/W
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