2N2369 MULTICOMP, 2N2369 Datasheet
2N2369
Specifications of 2N2369
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2N2369 Summary of contents
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... Features: • • NPN Silicon Planar Epitaxial Transistors. • • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching Applications. Dimensions ...
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... High Speed Switching Transistors Absolute Maximum Ratings Parameter Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak (10µs Pulse) Power Dissipation 25°C a Derate above 25°C Power Dissipation 25° 100°C c Derate above 100° ...
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... High Speed Switching Transistors Electrical Characteristics (T Parameter DC Current Gain Small Signal Characteristic Transition Frequency Output Capacitance Turn on Time Turn off Time Storage time *Pulse Test : Pulse Width = 300µs, Duty Cycle = 2% Specifications V CE(sat CEO C maximum maximum maximum (V) ( 0.25 15 0.2 0.20 = 25° ...
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... High Speed Switching Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne Tel No 9645 8888 Fax No 9644 7898 AUSTRIA – Farnell InOne Tel No 662 2180 680 Fax No 662 2180 670 BELGIUM – Farnell InOne Tel No 475 2810 Fax No 227 3648 BRAZIL – ...