2N3773 NTE ELECTRONICS, 2N3773 Datasheet
2N3773
Manufacturer Part Number
2N3773
Description
TRANSISTOR,BJT,NPN,140V V(BR)CEO,16A I(C),TO-3
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE285MCP.pdf
(2 pages)
Specifications of 2N3773
Rohs Compliant
YES
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
180V
Transition Frequency Typ Ft
6MHz
Power Dissipation Pd
150W
Dc Collector Current
16A
Dc Current Gain Hfe
70
No. Of Pins
2
Available stocks
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Part Number
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Price
Part Number:
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Manufacturer:
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Quantity:
20 000
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Part Number:
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Manufacturer:
ON Semiconductor
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ONSEMICON
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Part Number:
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Quantity:
20 000
Description:
The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type
package designed for use in power amplifier applications.
Applications:
D Recommended for 100W High–Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (T
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Emitter Current, I
Power Dissipation, P
Junction Temperature, T
Storage Temperature, T
Electrical Characteristics: (T
Note 1. NTE284MP is a matched pair of NTE284 with their DC Current Gain (h
Note 2. NTE285MP is a matched pair of NTE285 with their DC Current Gain (h
Note 3. NTE285MCP is a matched complementary pair containing 1 each of NTE284 (NPN) and
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base to Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
NTE285
NTE284
10% of each other.
10% of each other.
NTE285 (PNP).
Parameter
E
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
Silicon Complementary Transistors
NTE284 (NPN) & NTE285 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
Audio Amplifier Output
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= +25 C unless otherwise specified)
(BR)CEO
(BR)EBO
I
I
CE(sat)
V
h
C
CBO
EBO
f
FE
BE
T
ob
V
V
I
I
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CB
= 10mA, I
= 0.1A, I
= 10A, I
= 5V, I
= 90V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
B
Condition
C
B
C
C
C
C
= 1A
E
E
= 0
= 0
= 2A
= 10A
= 2A
= 0
= 0
= 0, f = 1MH
Z
Min
180
70
–
–
5
–
–
–
–
–
FE
FE
) matched to within
) matched to within
Typ
300
450
–65 C to +150 C
–
–
–
–
–
–
–
6
Max Unit
100
100
140
3.0
2.5
–
–
–
–
–
+150 C
150W
MH
180V
180V
pF
pF
16A
16A
V
V
V
V
V
A
A
5V
Z
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2N3773 Summary of contents
Page 1
NTE284 (NPN) & NTE285 (PNP) Silicon Complementary Transistors Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications: D Recommended for 100W High–Fidelity Audio Frequency ...
Page 2
Max .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) Base .875 (22.2) Dia Max .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max .525 (13.35) R Max Collector/Case Seating Plane ...