BC640 MULTICOMP, BC640 Datasheet - Page 2

• Manufacturer Part Number: BC640
• Description: BIPOLAR TRANSISTOR, PNP, -80V TO-92
• Manufacturer: MULTICOMP

Specifications of BC640

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -80V
• Transition Frequency Typ Ft: 150MHz
• Power Dissipation Pd: 800mW
• Dc Collector Current: 1mA
• Dc Current Gain Hfe: 250
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (T
Absolute Maximum Ratings (T
*Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at T
Derate Above 25°C
Power Dissipation at T
Derate Above 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance
From Junction to Case
From Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
Base Emitter On Voltage
Collector Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Transistors Frequency
Output Capacitance
Input Capacitance
BC640
Low Power Bipolar Transistors
Description
Description
a
c
= 25°C
= 25°C
a
= 25°C unless otherwise specified)
a
V
Symbol
V
V
CE (sat)
V
BE (on)
= 25°C)
V
I
h
CEO*
CBO
CBO
EBO
C
FE
C
f
T
ob
ib
*
*
*
I
C
= 50mA, V
V
Page 2
I
BE
I
I
I
C
C
C
C
I
V
C
I
= 500mA, I
I
V
V
= 500mA, V
= 150mA, V
= 500mA, V
= 0.5V, I
C
I
CB
C
Test Condition
E
= 5mA, V
CB
CB
Symbol
= 100µA, I
T
R
= 10mA, I
= 10µA, I
V
V
V
R
T
= 10V, f = 1MHz
j,
th (j-c)
Group-10
Group-16
P
a
CBO
CEO
EBO
I
th (j-a)
= 30V, I
= 30V, I
T
C
CE
D
= 125°C
stg
C
= 2V, f = 100MHz
=0, f = 1MHz
B
CE
C
CE
CE
CE
E
E
B
= 50mA
E
= 0
= 2V
= 0
= 0
= 0
= 0
= 2V
= 2V
= 2V
-55 to +150
BC640
2.75
800
156
5.0
1.0
6.4
80
22
45
150 (Typical)
110 (Typical)
9.0 (Typical)
100 - 250
BC640
40 - 160
63 - 160
<100
>5.0
<1.0
<0.5
>80
<10
>25
>25
11/05/08 V1.1
mW/°C
°C/W
Unit
mW
mA
°C
V
Unit
MHz
nA
µA
V
V
-
pF