FZT605 Diodes Inc, FZT605 Datasheet
FZT605
Manufacturer Part Number
FZT605
Description
DARLINGTON TRANSISTOR, SOT-223
Manufacturer
Diodes Inc
Datasheet
1.FZT605.pdf
(2 pages)
Specifications of FZT605
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
120V
Gain Bandwidth Ft Typ
150MHz
Power Dissipation Pd
2W
Dc Collector Current
1.5A
Dc Current Gain Hfe
5000
Operating Temperature
RoHS Compliant
Rohs Compliant
Yes
Transition Frequency Typ Ft
150MHz
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FZT605TA
Manufacturer:
ZETEX
Quantity:
7 152
Part Number:
FZT605TA
Manufacturer:
ZETEX
Quantity:
20 000
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 4 - MARCH 2001
FEATURES
*
*
PARTMARKING DETAIL -
COMPLEMENTARY TYPES -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%
Spice parameter data is available upon request for these devices.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
Guaranteed h
Fast Switching
FE
Specified up to 2A
FZT605
FZT705
SYMBOL MIN. MAX. UNIT CONDITIONS.
V
V
V
I
I
I
V
V
V
h
f
C
C
t
t
CBO
EBO
CES
t
on
off
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
FE
ibo
obo
amb
TBA
140
120
10
2K
5K
2K
0.5K
150
90 Typical
15 Typical
0.5 Typical
1.6 Typical
= 25°C unless otherwise stated).
0.01
10
0.1
10
1.0,
1.5
1.8
1.7
100K
SYMBOL
V
V
V
I
I
P
T
CM
C
tot
j
CBO
CEO
EBO
:T
stg
V
V
V
V
V
V
V
MHz
pF
pF
nsec
nsec
A
A
A
A
I
I
I
V
V
V
V
I
I
I
I
I
I
I
I
I
f=20MHz
V
VCB=10V, F=1MHz
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
EB
CES
EB
=100 A
=10mA*
=100 A
=250mA, I
=1A, I
=1A, I
=50mA, V
=500mA, V
=1A, V
=2A, V
=100mA, V
=500mA, V
=1A, V
=I
-55 to +150
=8V
=500mV, f=1MHz
=120V
=120V,
C
=120V
B2
VALUE
140
120
=0.5mA
1.5
10
FZT605
4
2
B
B
CE
CE
CE
=1mA*
=1mA*
=5V*
=5V*
T
=5V*
CE
amb
B
CE
CE
CE
=0.25mA*
=5V
B
=100°C
=5V*
=10V
=10V
UNIT
C
W
°C
V
V
V
A
A
E
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FZT605 Summary of contents
Page 1
... I 2K 100K I 0. 150 MHz I t f=20MHz C 90 Typical pF V ibo C 15 Typical pF VCB=10V, F=1MHz obo t 0.5 Typical nsec 1.6 Typical nsec off TBA FZT605 VALUE UNIT 140 V 120 1 -55 to +150 °C =100 A C =10mA* C =100 A E =120V CB =120V, T =100°C CB ...
Page 2
... I /I =100 C B 1.0 0.8 0.6 0 Collector Current (Amps 100ms 0.1 10ms 1ms 100 s 0.01 1000 Collector Emitter Voltage (V) CE FZT605 Safe Operating Area 78 -55°C +25°C V = -55°C +25°C +100°C V = BE(on) C 100 1000 ...