MJ10016 NTE ELECTRONICS, MJ10016 Datasheet - Page 2

• Manufacturer Part Number: MJ10016
• Description: BIPOLAR TRANSISTOR, NPN, 500V
• Manufacturer: NTE ELECTRONICS

Specifications of MJ10016

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 500V
• Power Dissipation Pd: 250W
• Dc Collector Current: 50A
• Dc Current Gain Hfe: 25
• Operating Temperature Range: -65°C To +200°C
• No. Of Pins: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse width = 300µs, Duty Cycle ≤ 2%.
On Characteristics (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Diode Forward Voltage
Dynamic Characteristics
Output Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
.350 (8.89)
.215 (5.45)
Parameter
(10.92)
.430
.312 (7.93) Min
Emitter
.135 (3.45) Max
Base
Symbol
V
V
CE(sat)
BE(sat)
h
C
V
t
1.187 (30.16)
t
FE
t
t
ob
d
s
r
f
(
F
.875 (22.2)
Dia Max
)
C
Collector/Case
I
I
I
I
I
I
V
V
V
V
= +25°C unless otherwise specified)
c
c
C
C
C
F
(16.9)
CB
CC
BE( ff)
BE(off)
.665
= 20A, V
= 40A, V
= 20A
= 20A, I
= 50A, I
= 20A, I
.040 (1.02)
= 10V, I
= 250V, I
= 5V tp = 25µs Duty Cycle ≤ 2%
= 5V, tp = 25µs, Duty Cycle ≤ 2%
.525 (13.35) R Max
B
B
B
CE
CE
= 1.0A
= 10A
= 1.0A
E
Test Conditions
C
= 5.0V
= 5.0V
= 0, f = 100kHz
= 20A, I
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
B1
= 1.0A,
Seating
Plane
B
 50
Min Typ Max Unit
25
10
−
−
−
−
−
−
−
−
−
 8
−
−
−
−
−
−
−
−
−
−
−
2.75
750
2.2
5.0
5.0
0.3
1.0
2.5
1.0
C
E
−
−
pF
us
us
us
us
V
V
V
V