MJ11033 MULTICOMP, MJ11033 Datasheet - Page 2
![BIPOLAR TRANSISTOR, PNP, -120V TO-3](/photos/22/22/222257/4423690_sml.jpg)
MJ11033
Manufacturer Part Number
MJ11033
Description
BIPOLAR TRANSISTOR, PNP, -120V TO-3
Manufacturer
MULTICOMP
Datasheet
1.MJ11032.pdf
(5 pages)
Specifications of MJ11033
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
120V
Power Dissipation Pd
300W
Dc Collector Current
50A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJ11033G
Manufacturer:
ON
Quantity:
2 000
Part Number:
MJ11033G
Manufacturer:
NUVOTON
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics (T
MJ11032, 11033
Darlington Power Transistors
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(I
Collector Cut off Current
(V
Collector-Emitter Leakage Current
(V
(V
Emitter Cut off Current
(V
ON Characteristics (1)
DC Current Gain
(I
(I
Collector-Emitter Saturation Voltage
(I
(I
Base-Emitter Saturation Voltage
(I
(I
C
C
C
C
C
C
C
Thermal Resistance Junction to Case
CE
CE
CE
EB
= 100mA, I
= 25A, V
= 50A, V
= 25A, I
= 50A, I
= 25A, I
= 50A, I
= 50V, I
= 5.0V, I
= 120V, R
= 120V, R
B
B
B
B
CE
CE
B
= 200mA)
= 250mA)
= 500mA)
= 300mA)
Characteristic
C
B
= 0)
= 5.0V)
= 5.0V)
BE
BE
= 0)
= 0)
Figure - 1 Power Derating
= 1kΩ)
= 1kΩ, T
T
C
Characteristic
, Temperature (°C)
C
= 125°C)
C
= 25°C unless otherwise noted)
Symbol
Rθjc
Page 2
Maximum
0.584
V
Symbol
V
V
CEO(sus)
I
CE(sat)
I
I
BE(sat)
h
CEO
CER
EBO
FE
°C/W
Unit
Minimum
1000
120
400
-
-
-
-
-
Maximum
18,000
2.0
2.0
5.0
2.5
3.5
3.0
4.5
10
-
31/05/05 V1.0
Unit
mA
V
V
-