MJE2955T MULTICOMP, MJE2955T Datasheet - Page 3

• Manufacturer Part Number: MJE2955T
• Description: BIPOLAR TRANSISTOR, NPN, 60V TO-220
• Manufacturer: MULTICOMP

Specifications of MJE2955T

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 60V
• Transition Frequency Typ Ft: 2MHz
• Power Dissipation Pd: 75W
• Dc Collector Current: 10A
• Dc Current Gain Hfe: 100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (T
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
(2) f
On Characteristics (1)
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(I
Collector Cut off Current
(V
Collector Cut off Current
(V
(V
Collector Cut off Current
(V
(V
Emitter Cut off Current
(V
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(I
DC Current Gain
(I
(I
Collector-Emitter Saturation Voltage
(I
(I
Base-Emitter On Voltage
(I
MJE2955T, 3055T
Complementary Power Transistors
C
C
C
C
C
C
C
CE
CE
CE
CB
CB
EB
T =
= 200mA, I
= 500mA, V
= 4.0A, V
= 10A, V
= 4.0A, I
= 10A, I
= 4.0A, V
= 30V, I
= 70V, V
= 70V, V
= 70V, I
= 70V, I
= 5.0V, I
h
fe
• f
B
B
CE
CE
CE
B
E
E
test.
= 3.3A)
C
BE(off)
BE(off)
= 0.4A)
B
= 0)
= 0)
= 0, T
CE
= 4.0V)
= 0)
= 4.0V)
= 4.0V)
= 0)
= 10V, f = 500KHz)
= 1.5V)
= 1.5V, T
C
= 150°C)
Parameter
C
= 150°C)
C
= 25°C unless otherwise noted)
Page 3
V
Symbol
V
V
CEO(sus)
I
I
I
CE(sat)
I
BE(on)
h
CEO
CBO
CEX
EBO
f
FE
T
Minimum
5.0
2.0
60
20
-
-
-
-
-
-
Maximum
100
0.7
1.0
5.0
1.0
5.0
1.1
8.0
1.8
10
-
-
31/05/05 V1.0
Unit
mA
V
V
-
MHz