TIP31A MULTICOMP, TIP31A Datasheet

BIPOLAR TRANSISTOR, NPN, 60V TO-220

TIP31A

Manufacturer Part Number
TIP31A
Description
BIPOLAR TRANSISTOR, NPN, 60V TO-220
Manufacturer
MULTICOMP
Datasheet

Specifications of TIP31A

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
40W
Dc Collector Current
3A
Dc Current Gain Hfe
50
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP31A
Manufacturer:
NS
Quantity:
240
Part Number:
TIP31AG
Manufacturer:
TI
Quantity:
8 313
Part Number:
TIP31ATU
Manufacturer:
Fairchild Semiconductor
Quantity:
1 914
Pin 1. Base
TIP31, TIP32
High Power Bipolar Transistor
2. Collector
3. Emitter
4. Collector(Case).
Features:
• Collector-Emitter sustaining voltage -
• Collector-Emitter saturation voltage -
• Current gain-bandwidth product f
V
Dimensions
V
CE(sat)
CEO(sus)
G
M
O
A
B
C
D
E
H
K
F
L
J
I
= 1.2V (Maximum) at I
= 60V (Minimum) - TIP31A, TIP32A
= 100V (Minimum) - TIP31C, TIP32C.
Page 1
Minimum
14.68
13.06
9.78
5.01
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
Dimensions : Millimetres
C
Maximum
= 3.0A.
15.31
10.42
14.62
T
6.52
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
2.98
3.90
= 3.0MHz (Minimum) at I
Complementary Silicon
TIP32C
TIP31A
Power Transistors
NPN
60 - 100 Volts
C
3 Ampere
40 Watts
= 500mA.
TO-220
TIP32A
TIP32C
31/05/05 V1.0
PNP

Related parts for TIP31A

TIP31A Summary of contents

Page 1

... TIP31, TIP32 High Power Bipolar Transistor Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Features: • Collector-Emitter sustaining voltage - V = 60V (Minimum) - TIP31A, TIP32A CEO(sus) = 100V (Minimum) - TIP31C, TIP32C. • Collector-Emitter saturation voltage - V = 1.2V (Maximum 3.0A. CE(sat) C • Current gain-bandwidth product f T Dimensions Minimum Maximum A 14 ...

Page 2

... Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation 25°C C Derate above 25°C Operation and Storage Junction Temperature Range Thermal Characteristics Characteristic Thermal Resistance Junction to case TIP31A Symbol TIP32A V CEO 60 V CBO V EBO ...

Page 3

... V = 10V 1kHz (1) Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2.0% ( • TEST = 25°C unless otherwise noted) C Symbol TIP31A, TIP32A V CEO(sus) TIP31C, TIP32C TIP31A, TIP32A I CEO TIP31C, TIP32C TIP31A, TIP32A I CES TIP31C, TIP32C I EBO CE(sat) V BE(on Page 3 Minimum Maximum - 60 100 - 0 ...

Page 4

TIP31, TIP32 High Power Bipolar Transistor Figure - 2 Switching Time Equivalent Circuit Figure - 4 DC Current Gain Figure - 3 Turn-On Time Figure - 5 Turn-Off Time Page 4 31/05/05 V1.0 ...

Page 5

TIP31, TIP32 High Power Bipolar Transistor Figure - 6 Active Region Safe Operating Area Figure - 7 Collector Saturation Region There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating ...

Page 6

... TIP31, TIP32 High Power Bipolar Transistor Figure - 9 “ON” Voltage Specifications TYPE Part Number TIP31A NPN TIP31C TIP32A PNP TIP32C Figure - 10 Collector Cut-off Region Page 6 31/05/05 V1.0 ...

Page 7

... Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2004. ...

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