2N7000 NTE ELECTRONICS, 2N7000 Datasheet

Page 1

... SYMBOL TEST CONDITION BV V =0V, I =10 A DSS =60V, V =0V DSS =20V, V =0V GSSF =-20V, V =0V GSSR GS DS 2N7000 N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR B C DIM MILLIMETERS N A 4.70 MAX 4.80 MAX G C 3.70 MAX 14.00 0.50 K 0.55 MAX ...

Page 2

... Drain-Source Diode Forward Voltage (Note 2) Pulse Test : Pulse Width 80 , Duty Cycle 1% DYNAMIC CHARACTERISTICS CHARACTERISTIC Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Switching Time Turn-Off Time SWITCHING TIME TEST CIRCUIT 2005. 10. 27 Revision 2N7000 SYMBOL TEST CONDITION =250 =10V, I =500mA DS(ON) ...

Page 3

... COMMON SOURCE Ta=25 C 1.2 0.9 0.6 0 DRAIN-SOURCE VOLTAGE V R DS(ON = =50mA =10V GS I =500mA D 0 -100 -50 0 JUNCTION TEMPERATURE 0.4 0.2 0 -0.2 -0.4 -100 -50 0 JUNCTION TEMPERATURE 2005. 10. 27 Revision 2N7000 - = ( 100 150 COMMON SOURCE =250 100 150 DS(ON = 10V 1 COMMON SOURCE ...

Page 4

... 1000 COMMON SOURCE f=1MHz Ta=25 C 100 DRAIN-SOURCE VOLTAGE V SOA 10 Tj=150 , Ta=25 ,Single Pulse 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 DRAIN-SOURCE VOLTAGE V 2005. 10. 27 Revision 2N7000 DS Ciss Coss Crss ( =1ms PW =10ms PW =100ms 100 ( COMMON SOURCE V =30V 0. = GATE CHARGE Q (nC 700 600 ...