FZT949 Diodes Inc, FZT949 Datasheet - Page 2

• Manufacturer Part Number: FZT949
• Description: TRANSISTOR, PNP, SOT-223
• Manufacturer: Diodes Inc

Specifications of FZT949

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 30V
• Power Dissipation Pd: 3W
• Dc Collector Current: 7A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No. Of Pins: 3
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
R
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
CE(sat)
46m at 5A
SYMBOL
V
V
V
V
I
I
R 1k
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
on
off
FE
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
MIN.
-40
-40
-20
-6
100
100
75
60
15
amb
TBA
= 25°C unless otherwise stated)
TYP.
-55
-55
-30
-8
-60
-110
-200
-360
-1050
-870
200
200
160
130
40
80
163
120
126
MAX.
-50
-1
-50
-1
-10
-130
-180
-280
-450
-1200
-1050
300
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
A
A
CONDITIONS.
I
I
I
I
V
V
T
V
V
T
V
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B2
amb
amb
=-100 A
CB
CB
CB
CB
EB
CB
FZT948
=-100 A
=-10mA*
=-0.5A, I
=-2A, I
=-4A, I
=-6A, I
=-5A, I
=-10mA, V
=-1A, V
=-5A, V
=-10A, V
=-20A, V
=-100mA, V
=-4A, I
=-1 A, RB 1k
=-6A, V
=400mA, V
=-6V
=-30V
=-30V,
=-30V
=-30V,
=-10V, f=1MHz
=100°C
=100°C
B
B
B
B
B1
CE
CE
CE
=-200mA*
=-400mA*
=-250mA*
=-300mA*
B
=-400mA
CE
CE
=-10mA*
=-1V*
=-1V*
=-1V*
CE
=-2V*
=-1V*
CE
CC
=-1V
=-10V
=-10V