NTE15 NTE ELECTRONICS, NTE15 Datasheet
NTE15
Manufacturer Part Number
NTE15
Description
TRANSISTOR,BJT,NPN,18V V(BR)CEO,50MA I(C),SIP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE15.pdf
(2 pages)
Features:
D High Transition Frequency: f
D Low Base Resistance and High Gain
D Excellent Noise Characteristics
Applications:
D VHF Mixers and Oscillators
D UHF Oscillators
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
Output Capacitance
Collector–Base Time Constant
Parameter
C
VHF Amp, Mixer, Oscillator, UHF OSC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
= 1.1GHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
V
V
V
Symbol
V
(BR)CEO
(BR)CBO
(BR)EBO
C
I
I
CE(sat)
h
C
CBO
EBO
f
dbb
FE
T
ob
NTE15
I
I
I
V
V
V
I
V
V
I
f = 31.8MHz
C
C
E
C
C
CB
EB
CE
CE
CB
= 1mA
= 50 A
= 10mA, I
= 10mA, V
= 50 A
= 3V
= 20V
= 10V, I
= 5V, I
= 10V, f = 1MHz
Test Conditions
E
C
B
= 10mA
CB
= 5mA
= 1mA
= 5V,
Min
19
30
39
5
–
–
–
–
–
–
Typ Max Unit
600 1100 MHz
0.1
1.2
10
–
–
–
–
–
–
–55 to +125 C
0.5
0.5
1.5
15
–
–
–
–
–
300mW
+125 C
50mA
pS
pF
30V
19V
V
V
V
V
–
A
A
4V
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NTE15 Summary of contents
Page 1
... Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Transition Frequency Output Capacitance Collector–Base Time Constant NTE15 Silicon NPN Transistor = 1.1GHz T = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
E .100 (2.54) .051 (1.29) .280 (7.11) .185 (4. .022 (0.55) .138 (3.5) ...