NTE227 NTE ELECTRONICS, NTE227 Datasheet
NTE227
Manufacturer Part Number
NTE227
Description
TRANSISTOR,BJT,NPN,300V V(BR)CEO,100MA I(C),TO-237
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE227.pdf
(2 pages)
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Power Dissipation (T
Power Dissipation (T
Maximum Operating Junction Temperature, T
Thermal Resistance, Junction–to–Case (T
Thermal Resistance, Junction–to–Ambient (T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transition Frequency
Base–Emitter Saturation Voltage
Capacitance
Parameter
C
A
COLLECTOR LEAD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
EBO
High Voltage Amp, Video Output
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
D
max
V
V
V
= +25 C), P
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
BE(sat)
h
CBO
EBO
C
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
T
ib
COLLECTOR LEAD
NTE227
A
J
max
V
V
I
I
I
I
I
I
I
I
I
= +25 C), R
C
C
C
C
E
C
C
C
C
CB
EB
= 10 A
= 1mA, V
= 10mA, V
= 1mA
= 100 A
= 20mA, I
= 20mA, I
= 10mA
= 10mA
D
max
= 260V
= 6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
B
B
CE
= +25 C), R
thJA
= 2mA
= 2mA
= 10V
= 10V
. . . . . . . . . . . . . . . . . . . . . .
thJC
Min
300
300
25
40
50
. . . . . . . . . . .
–
–
6
–
–
–
–
0.25
0.74
Typ
90
–
–
–
–
–
–
–
–
–
Max Unit
0.76
100
100
200
200
1.0
1.0
70
–
–
–
–
62.5 C/W
147 C/W
850mW
+150 C
100mA
MHz
300V
300V
nA
nA
pF
V
V
V
V
V
V
2W
6V
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NTE227 Summary of contents
Page 1
... Transition Frequency Base–Emitter Saturation Voltage Capacitance NTE227 Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
.018 (0.46) 3.050 (1.27) .050 (1.27) .200 (5.08) .180 (4.57) .180 (4.57) .594 (15.09) .015 (0.38) .050 (1.27) .140 (3.55) .090 (2.28) R ...