NTE2357 NTE ELECTRONICS, NTE2357 Datasheet

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NTE2357

Manufacturer Part Number
NTE2357
Description
Pre-Biased "Digital" Transistor,50V V(BR)CEO,100mA I(C),TO-92var
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2357

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D Built–In Bias Resistor (R
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (T
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Band–width Product
Output Capacitance
NTE2358
NTE2358
NTE2357
NTE2357
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital
C
Silicon Complementary Transistors
NTE2357 (NPN) & NTE2358 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
1
CBO
= 22k , R
CEO
A
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
w
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
/2 Built–In 22k Bias Resistors
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
I
I
I
C
CBO
CEO
h
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
ob
2
= 22k )
V
V
V
V
V
V
CB
CE
EB
CE
CE
CB
= 5V, I
= 40V, I
= 40V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
Test Conditions
C
C
E
B
C
= 0
= 5mA
= 0
= 0
= 5mA
Min
70
50
Typ
113
250
200
3.7
5.5
–55 to +160 C
Max
150
0.1
0.5
300mW
+150 C
100mA
200mA
MHz
MHz
Unit
pF
pF
50V
50V
10V
A
A
A

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NTE2357 Summary of contents

Page 1

... NTE2357 (NPN) & NTE2358 (PNP) Silicon Complementary Transistors Digital Features: D Built–In Bias Resistor (R D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (T Collector to Base Voltage, V Collector to Emitter Voltage, V Emitter to Base Voltage, V EBO Collector Current, I ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Collector–Emitter Saturation Voltage Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Input OFF Voltage Input ON Voltage Input Resistance Input Resistance Ratio Collector (Output Base (Input Emitter (GND) NPN = +25 C unless ...

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