NTE24 NTE ELECTRONICS, NTE24 Datasheet
NTE24
Manufacturer Part Number
NTE24
Description
TRANSISTOR,BJT,NPN,80V V(BR)CEO,1.2A I(C),TO-237
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE24.pdf
(2 pages)
Description:
The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package
designed for general purpose medium power amplifier and switching circuits that require collector cur-
rents to 1A.
Features:
D High Collector–Emitter Breakdown Voltage: V
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Power Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Continuous
Peak
T
T
A
C
= +25 C
= +25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
Silicon Complementary Transistors
EBO
J(max)
General Purpose Amplifier, Switch
CBO
CEO
NTE24 (NPN) & NTE25 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
(BR)CEO
I
I
CBO
h
EBO
FE
thJC
I
V
V
V
V
V
C
CB
EB
CE
CE
CE
thJA
= 10mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V, I
= 100V, I
= 2V, I
= 2V, I
= 2V, I
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
C
C
C
B
= 80V
= 0
= 50mA
= 250mA
= 500mA
E
= 0
= 0
Min
80
40
40
25
–
–
Typ
–
–
–
–
–
–
–55 to +150 C
Max
100
0.1
–
–
–
–
167 C/W
850mW
50 C/W
+150 C
Unit
100V
nA
V
80V
A
2W
5V
1A
2A
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NTE24 Summary of contents
Page 1
... Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector cur- rents to 1A. Features: D High Collector–Emitter Breakdown Voltage: V ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance .100 (2.54) = +25 C unless otherwise specified) A Symbol Test Conditions 500mA, I CE(sat 1000mA, I ...