NTE26 NTE ELECTRONICS, NTE26 Datasheet

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NTE26

Manufacturer Part Number
NTE26
Description
TRANSISTOR,BJT,NPN,120V V(BR)CEO,50MA I(C),TO-92VAR
Manufacturer
NTE ELECTRONICS
Datasheet
Features:
D V
D Low Noise: = 1dB (Typ), 10dB (Max)
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Emitter Current, I
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage V
Current Gain–Bandwidth Product
Output Capacitance
Noise
CEO
= 120V (Min)
Parameter
E
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Low Noise Audio Amplifier
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
Symbol
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
I
CE(sat)
I
h
C
CBO
EBO
NF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
ob
V
V
V
I
V
V
V
r
C
g
NTE26
CB
EB
CE
CE
CB
CE
= 10k
= 10mA, I
= 120V, I
= 5V, I
= 6V, I
= 6V, I
= 10V, I
= 6V, I
Test Conditions
C
C
C
C
B
E
= 0
= 2mA
= 1mA
= 0.1mA, f = 1kHz,
E
= 1mA
= 0, f = 1MHz
= 0
Min
350
Typ
100
3.0
1.0
–55 to +125 C
Max Unit
700
0.1
0.1
0.3
10
–100mA
200mW
+125 C
100mA
MHz
120V
120V
pF
dB
V
A
A
5V

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NTE26 Summary of contents

Page 1

... Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector–Emitter Saturation Voltage V Current Gain–Bandwidth Product Output Capacitance Noise NTE26 Silicon NPN Transistor Low Noise Audio Amplifier = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Max .071 (1. .050 (1.27) .050 (1.27) .126 (3.2) Max .500 (12.7) Max .035 (0.9) .102 (2.6) Max ...

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