NTE29 NTE ELECTRONICS, NTE29 Datasheet
NTE29
Manufacturer Part Number
NTE29
Description
TRANSISTOR,BJT,NPN,80V V(BR)CEO,50A I(C),TO-3
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE29.pdf
(2 pages)
Specifications of NTE29
Rohs Compliant
YES
Description:
The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed
for use in high power amplifier and switching circuit applications.
Features:
D High Current Capability: I
D DC Current Gain: h
D Low Collector-Emitter Saturation Voltage: V
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
Collector-Base Voltage, V
Emitter-Base Voltage, V
Continuous Collector Current, I
Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction-to-Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25°C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
Silicon Complementary Transistors
EB
High Power, High Current Switch
= 15 to 60 @ I
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE29 (NPN) & NTE30 (PNP)
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
C
= 50A (Continuous)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
CEO(sus)
I
I
I
I
CEO
CBO
EBO
CEX
C
D
= 25A
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
T
V
V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
CE
CE
CE
CB
BE
CE(sat)
= 0.2A, I
= +150°C
= 40V, I
= 80V, V
= 80V, V
= 80V, I
= 5V, I
Test Conditions
= 1V Max @ I
C
B
B
E
= 0, Note 1
= 0
EB(off)
EB(off)
= 0
= 0
= 1.5V
= 1.5V,
C
= 25A
Min Typ
80
-
-
-
-
-
-
-
-
-
-
-
-65° to +200°C
-65° to +200°C
Max Unit
1.715W/°C
0.584°C/W
10
-
1
2
2
5
300W
mA
mA
mA
mA
mA
80V
80V
50A
15A
V
5V
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NTE29 Summary of contents
Page 1
... Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: D High Current Capability Current Gain Low Collector-Emitter Saturation Voltage: V ...
Page 2
Parameter ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Small-Signal Current Gain Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. .350 ...