NTE47 NTE ELECTRONICS, NTE47 Datasheet
NTE47
Manufacturer Part Number
NTE47
Description
T-NPN SI LO NOISE AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE47.pdf
(2 pages)
Specifications of NTE47
Rohs Compliant
YES
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient (Note 1), R
Note 1 R
Electrical Characteristics: (T
Note 2 Pulse test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Colletor–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Derate above 25 C
thJA
Parameter
is measured with the device soldered into a typical printed circuit board.
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Gain, Low Noise Amp
A
stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise noted)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
Symbol
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(on)
h
CBO
FE
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
V
V
V
I
I
V
C
C
E
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE47
CB
CE
CE
CE
CE
CE
= 10mA, I
= 100 A, I
= 10 A, I
= 10mA, I
= 50mA, I
= 30V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
C
C
C
C
C
E
B
B
B
thJA
E
= 10 A
= 100 A
= 1mA
= 10mA
= 1mA
= 0
= 0
= 0, Note 2
= 0.5mA
= 0.5mA
= 0
2.0%
. . . . . . . . . . . . . . . . . . . . . . . . . .
Min
400
500
500
500
6.5
45
45
–
–
–
–
1100
1150
0.08
Typ
580
850
1.0
0.6
–
–
–
–
–55 to +150 C
–55 to +150 C
Max
0.2
0.3
0.7
50
–
–
–
–
–
–
–
12mW/ C
83.3 C/W
200 C/W
625mW
200mA
Unit
6.5V
nA
V
V
V
V
V
V
45V
45V
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NTE47 Summary of contents
Page 1
... Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Note 2 Pulse test: Pulse Width NTE47 Silicon NPN Transistor High Gain, Low Noise Amp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics: (T Parameter Small–Signal Characteristics Current Gain–Bandwidth Product Output Capaciatnce Noise Figure (5.33) (12.7) .100 (2.54) .105 (2.67) Max .205 (5.2) Max = +25 C unless otherwise noted) A Symbol Test Conditions 5V 1mA, ...