NTE64 NTE ELECTRONICS, NTE64 Datasheet
NTE64
Manufacturer Part Number
NTE64
Description
TRANSISTOR,BJT,NPN,15V V(BR)CEO,30MA I(C),SOT-100
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE64.pdf
(2 pages)
Description:
The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise small–signal amplifiers and applications requiring fast switching times.
Features:
D High Current Gain–Bandwidth Product: f
D Low Noise Figure: NF = 2dB Typ @ f = 1GHz
D High Power Gain: G
D Third Order Intercept: +23dBm Typ
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Derate Above 25 C
Parameter
pe
EBO
CBO
= 10dB Min @ f = 1GHz
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UHF High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE64
T
thJA
= 4.5GHz Typ @ I
I
I
I
V
C
C
E
CB
= 0.1mA, I
= 1mA, I
= 0.1mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 15V, I
Test Conditions
B
E
C
= 0
E
= 0
= 0
= 0
C
= 15mA
Min Typ Max Unit
15
25
2
–
–
–
–
–
–65 to +150 C
50
3.3mW/ C
–
–
–
300 C/W
0.375W
30mA
nA
V
V
V
15V
25V
3V
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NTE64 Summary of contents
Page 1
... Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times. Features: D High Current Gain–Bandwidth Product Low Noise Figure 2dB Typ @ f = 1GHz D High Power Gain: G ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Dynamic Characteristics Current Gain–Bandwidth Product Collector–Base Capacitance Noise Figure Functional Tests Common–Emitter Amplifier Power Gain Third Order Intercept E = +25 C unless otherwise specified) C Symbol Test Conditions h ...