NTE75 NTE ELECTRONICS, NTE75 Datasheet
NTE75
Manufacturer Part Number
NTE75
Description
TRANSISTOR,BJT,NPN,80V V(BR)CEO,5A I(C),TO-111
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE75.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTE75492B
Manufacturer:
NTE
Quantity:
20 000
Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.
Features:
D Fast Switching: t
D Low Saturation Voltage: 250mV max @ 1A
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
DC Collector Current, I
Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Width = 300 s, Duty Cycle
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Cutoff Current
Collector–Base Cutoff Current
Emitter–Base Cutoff Current
T
T
A
C
= +25 C
= +100 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
r
D
, t
f
C
= 300ns (Max)
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
High Power Amplifier, Switch
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
opr
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
I
I
I
I
CEO
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEX
(Stud Mount)
thJC
I
I
I
V
V
V
V
2%.
NTE75
C
C
E
CE
CE
CB
EB
= 10 A
= 100mA, Note 1
= 10 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 60V
= 110V, V
= 80V
= 6V
Test Conditions
EB
= 500mV
Min
110
80
8
–
–
–
–
Typ
–
–
–
–
–
–
–
–65 to +200 C
–65 to +200 C
Max
100
0.4
0.4
10
–
–
–
3.33 C/W
Unit
110V
30W
V
V
V
80V
A
A
A
A
2W
8V
5A
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NTE75 Summary of contents
Page 1
... Description: The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for power supply, pulse amplifier, and similar high efficiency power switching applications. ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter DC Current Gain (Note 1) Collector Saturation Voltage Base Saturation Voltage Base ON Voltage AC Current Gain Current Gain–Bandwidth Product Output Capacitance Delay Time Rise Time Storage Time Fall Time Note 1. Pulse Width = ...