NTE95 NTE ELECTRONICS, NTE95 Datasheet
NTE95
Manufacturer Part Number
NTE95
Description
TRANSISTOR,BJT,NPN,250V V(BR)CEO,3A I(C),TO-210AA
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE95.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTE955SM
Manufacturer:
NTE
Quantity:
20 000
Absolute Maximum Ratings: (T
Collector−Base Voltage, V
Collector−Emitter Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Thermal Resistance, Junction−to−Case, R
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector−Emitter Sustainin Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter ON Voltage
Small−Signal Current Gain
Output Capacitance
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
High Voltage, High Power Switch
CBO
C
= +25°C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
V
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25°C unless otherwise specified)
|h
I
I
CE(sat)
I
BE(sat)
BE(on)
h
C
A
CEO
EBO
CEX
FE
FE
ob
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
|
D
I
V
V
V
V
V
V
I
I
I
V
V
V
C
C
C
CE
CE
EB
EB
CE
CE
CE
CE
CB
j(oper)
= 25mA
= 0.5A
= 3A, I
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0 5A
= 150V
= 200V
= 5V
= 6V
= 5V, I
= 5V,
= 5V, I
= 10V
= 10V, I
NTE95
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
0.3A
C
Test Conditions
C
= 3A
= 3A
T
T
I
I
= 0, f = 1MHz
C
C
C
C
= 100mA, f = 20MHz
= 250mA, f = 1kHz
= +150°C
= −55°C
Min
250
2.0
15
90
35
30
−
−
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65° to +200°C
−65° to +200°C
Max
0.25
250
100
1.0
1.0
2.0
2.2
2.2
10
10
−
−
−
−
−
2.5°C/W
250V
250V
Unit
mA
mA
0.3A
70W
µA
µA
µA
pF
V
V
V
V
6V
3A
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NTE95 Summary of contents
Page 1
... Emitter Cutoff Current DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Base−Emitter ON Voltage Small−Signal Current Gain Output Capacitance NTE95 Silicon NPN Transistor = +25°C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
T111 .057 (1.45) Dia (3 Places) .115 (2.92) T059 − Isolated Collector Emitter .763 (19.4) Max .425 (10.8) Base .190 (4.82) Dia Emitter .705 (17.9) Max .078 (1.97) Max 10−32 NF−2A Base Collector (Isolated) (5.08) .349 (8.87) .394 (10.0) .432 ...