AT-41535G Avago Technologies US Inc., AT-41535G Datasheet - Page 5

• Manufacturer Part Number: AT-41535G
• Description: RF TRANSISTOR, NPN, 12V, 8GHZ 35 MICRO-X
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41535G

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 500mW
• Dc Collector Current: 60mA
• Dc Current Gain Hfe: 180
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 10dB ~ 18dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (35 micro-X)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Noise Parameters at Tc = +25°C
V
35 micro-X Package Dimensions
For product information and a complete list of distributors, please go to our web site:
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0144EN
AV02-1216EN - April 29, 2008
.022
.56
Freq.GHz
0.1
0.5
1
2
4
CE
.057 ± .010
1.45 ± .25
=8V, Ic = 10mA, Zo=50 Ohm
BASE
1
.085
2.15
NfodB
1.30
1.33
1.42
1.73
2.92
11.54 ± .75
.455 ± .030
4
2
Gopt
Mag
0.184
0.206
0.107
0.328
0.557
.100
2.54
3
EMITTER
EMITTER
COLLECTOR
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
Ang
-4.1
9.5
15.8
-165.5
-128.3
in .xxx = ± 0.005
mm .xx = ± 0.13
.006 ± .002
.15 ± .05
.020
.508
RN/50
0.22
0.21
0.20
0.18
0.27
mm
.083
2.11
DIA.
Part Number Ordering Information
Part number
AT-41535G
www.avagotech.com
No of Devices
100